Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

GeSn materials have attracted considerable attention for their tunable band structures and high carrier mobilities, which serve well for future photonic and electronic applications. This research presents a novel method to incorporate Sn content as high as 18% into GeSn layers grown at 285–320 °C by...

Descripción completa

Detalles Bibliográficos
Autores principales: Kong, Zhenzhen, Wang, Guilei, Liang, Renrong, Su, Jiale, Xun, Meng, Miao, Yuanhao, Gu, Shihai, Li, Junjie, Cao, Kaihua, Lin, Hongxiao, Li, Ben, Ren, Yuhui, Li, Junfeng, Xu, Jun, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948769/
https://www.ncbi.nlm.nih.gov/pubmed/35335793
http://dx.doi.org/10.3390/nano12060981

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948769/
https://www.ncbi.nlm.nih.gov/pubmed/35335793
http://dx.doi.org/10.3390/nano12060981

Ejemplares similares