High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two temperatures of 77 K and...

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Detalles Bibliográficos
Autores principales: Balagula, Roman M., Subačius, Liudvikas, Jorudas, Justinas, Janonis, Vytautas, Prystawko, Pawel, Grabowski, Mikolaj, Kašalynas, Irmantas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948915/
https://www.ncbi.nlm.nih.gov/pubmed/35329518
http://dx.doi.org/10.3390/ma15062066

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8948915/
https://www.ncbi.nlm.nih.gov/pubmed/35329518
http://dx.doi.org/10.3390/ma15062066

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