Improved Performance of NbO(x) Resistive Switching Memory by In-Situ N Doping

Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-d...

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Detalles Bibliográficos
Autores principales: Xu, Jing, Zhu, Yuanyuan, Liu, Yong, Wang, Hongjun, Zou, Zhaorui, Ma, Hongyu, Wu, Xianke, Xiong, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949618/
https://www.ncbi.nlm.nih.gov/pubmed/35335842
http://dx.doi.org/10.3390/nano12061029

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949618/
https://www.ncbi.nlm.nih.gov/pubmed/35335842
http://dx.doi.org/10.3390/nano12061029

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