A Novel AlGaN/Si(3)N(4) Compound Buffer Layer HEMT with Improved Breakdown Performances

In this article, an AlGaN and Si(3)N(4) compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si(3)N(4) insulating layer is partially buried between the AlGaN buffer layer and AlN nucleating layer, which introduces...

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Detalles Bibliográficos
Autores principales: Guo, Jingwei, Hu, Shengdong, Li, Ping, Jiang, Jie, Wang, Ruoyu, Wang, Yuan, Wu, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949781/
https://www.ncbi.nlm.nih.gov/pubmed/35334756
http://dx.doi.org/10.3390/mi13030464

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949781/
https://www.ncbi.nlm.nih.gov/pubmed/35334756
http://dx.doi.org/10.3390/mi13030464

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