Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys

In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grown by physical vapor deposition on Sb(2)Te(3) and on Ge(2)Sb(2...

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Detalles Bibliográficos
Autores principales: Chèze, Caroline, Righi Riva, Flavia, Di Bella, Giulia, Placidi, Ernesto, Prili, Simone, Bertelli, Marco, Diaz Fattorini, Adriano, Longo, Massimo, Calarco, Raffaella, Bernasconi, Marco, Abou El Kheir, Omar, Arciprete, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949867/
https://www.ncbi.nlm.nih.gov/pubmed/35335820
http://dx.doi.org/10.3390/nano12061007

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8949867/
https://www.ncbi.nlm.nih.gov/pubmed/35335820
http://dx.doi.org/10.3390/nano12061007

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