A Numerical Analysis of Ductile Deformation during Nanocutting of Silicon Carbide via Molecular Dynamics Simulation

As a typical third-generation semiconductor material, silicon carbide (SiC) has been increasingly used in recent years. However, the outstanding performance of SiC component can only be obtained when it has a high-quality surface and low-damage subsurface. Due to the hard–brittle property of SiC, it...

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Detalles Bibliográficos
Autores principales: Liu, Bing, Li, Xiaolin, Kong, Ruijie, Yang, Haijie, Jiang, Lili
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8952004/
https://www.ncbi.nlm.nih.gov/pubmed/35329776
http://dx.doi.org/10.3390/ma15062325

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8952004/
https://www.ncbi.nlm.nih.gov/pubmed/35329776
http://dx.doi.org/10.3390/ma15062325

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