Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (R(t...

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Detalles Bibliográficos
Autores principales: Wang, Hongyue, Yuan, Chao, Xin, Yajie, Shi, Yijun, Zhong, Yaozong, Huang, Yun, Lu, Guoguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8952125/
https://www.ncbi.nlm.nih.gov/pubmed/35334758
http://dx.doi.org/10.3390/mi13030466

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8952125/
https://www.ncbi.nlm.nih.gov/pubmed/35334758
http://dx.doi.org/10.3390/mi13030466

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