Cargando…

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy

In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region. It was found that the thermal resistance (R(t...

Descripción completa

Detalles Bibliográficos
Autores principales:	Wang, Hongyue, Yuan, Chao, Xin, Yajie, Shi, Yijun, Zhong, Yaozong, Huang, Yun, Lu, Guoguang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8952125/ https://www.ncbi.nlm.nih.gov/pubmed/35334758 http://dx.doi.org/10.3390/mi13030466

Ejemplares similares

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs
por: Wang, Hongyue, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Effect of Electro-Thermo-Mechanical Coupling Stress on Top-Cooled E-Mode AlGaN/GaN HEMT
por: Jiang, Jie, et al.
Publicado: (2023)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
por: Jia, Li-Fang, et al.
Publicado: (2021)

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
por: Huang, Yu-Chun, et al.
Publicado: (2021)

The Electrical and Thermal Characteristics of Stacked GaN MISHEMT
por: Hui, Caixin, et al.
Publicado: (2022)

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication
por: Zhang, Penghao, et al.
Publicado: (2023)

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
por: Im, Ki-Sik, et al.
Publicado: (2022)

Diamond/GaN HEMTs: Where from and Where to?
por: Mendes, Joana C., et al.
Publicado: (2022)

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
por: Guo, Huaixin, et al.
Publicado: (2020)

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability
por: He, Zhiyuan, et al.
Publicado: (2022)

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
por: Dai, Jin-Ji, et al.
Publicado: (2021)

Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation
por: Qu, Yongfeng, et al.
Publicado: (2022)

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
por: Khediri, Abdelkrim, et al.
Publicado: (2021)

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
por: Ghosh, Saptarsi, et al.
Publicado: (2021)

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
por: Hsu, Lung-Hsing, et al.
Publicado: (2021)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
por: Guo, Huaixin, et al.
Publicado: (2022)

Computational-fitting method for mobility extraction in GaN HEMT
por: Chang, Kuan-Chang, et al.
Publicado: (2023)

Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022)

Laser Scanning Confocal Thermoreflectance Microscope for the Backside Thermal Imaging of Microelectronic Devices
por: Kim, Dong Uk, et al.
Publicado: (2017)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation
por: Cui, Peng, et al.
Publicado: (2022)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
por: Liu, Censong, et al.
Publicado: (2023)

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel †
por: Chen, Xinghuan, et al.
Publicado: (2023)

Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
por: Chakraborty, Surajit, et al.
Publicado: (2022)

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT
por: Qin, Yingshuo, et al.
Publicado: (2022)

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate
por: Wang, Hsiang-Chun, et al.
Publicado: (2022)

In situ Thermoreflectance Characterization of Thermal Resistance in Multilayer Electronics Packaging
por: Poopakdee, Nathawat, et al.
Publicado: (2022)

Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer
por: Hong, Kuo-Bin, et al.
Publicado: (2023)

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
por: Wang, Jie, et al.
Publicado: (2021)

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
por: Paz-Martínez, Gaudencio, et al.
Publicado: (2022)

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
por: Zou, Xiazhi, et al.
Publicado: (2023)

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
por: Huang, Chong-Rong, et al.
Publicado: (2021)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
por: Wu, Tian-Li, et al.
Publicado: (2020)

Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device
por: Lian, Tingting, et al.
Publicado: (2022)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_k0u4p6c1gckc1t6p94le14qqqe