Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films

In this study, we evaluated the temperature- and frequency-dependent ferroelectric characteristics of TiN/undoped HfO(2)/TiN metal-ferroelectric-metal (MFM) capacitors in which an undoped HfO(2) film was deposited through atomic layer deposition (ALD). Successful ferroelectric characteristics were a...

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Detalles Bibliográficos
Autores principales: Jang, Chan-Hee, Kim, Hyun-Seop, Kim, Hyungtak, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8953931/
https://www.ncbi.nlm.nih.gov/pubmed/35329549
http://dx.doi.org/10.3390/ma15062097

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8953931/
https://www.ncbi.nlm.nih.gov/pubmed/35329549
http://dx.doi.org/10.3390/ma15062097

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