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N-Type Nanosheet FETs without Ground Plane Region for Process Simplification
This paper proposes a simplified fabrication processing for nanosheet Field-Effect Transistors (FETs) part of beyond-3-nm node technology. Formation of the ground plane (GP) region can be replaced by an epitaxial grown doped ultra-thin (DUT) layer on the starting wafer prior to Si(x)/SiGe(1−x) stack...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8954768/ https://www.ncbi.nlm.nih.gov/pubmed/35334724 http://dx.doi.org/10.3390/mi13030432 |