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Effect of Substrate Temperature on Morphological, Structural, and Optical Properties of Doped Layer on SiO(2)-on-Silicon and Si(3)N(4)-on-Silicon Substrate

A high concentration of Er(3+) without clustering issues is essential in an Er-doped waveguide amplifier as it is needed to produce a high gain and low noise signal. Ultrafast laser plasma doping is a technique that facilitates the blending of femtosecond laser-produced plasma from an Er-doped TeO(2...

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Detalles Bibliográficos
Autores principales: Kamil, Suraya Ahmad, Jose, Gin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955047/
https://www.ncbi.nlm.nih.gov/pubmed/35335732
http://dx.doi.org/10.3390/nano12060919