Polarization Gradient Effect of Negative Capacitance LTFET

In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO(2)) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec)...

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Detalles Bibliográficos
Autores principales: Zhang, Hao, Chen, Shupeng, Liu, Hongxia, Wang, Shulong, Wang, Dong, Fan, Xiaoyang, Chong, Chen, Yin, Chenyu, Gao, Tianzhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955958/
https://www.ncbi.nlm.nih.gov/pubmed/35334636
http://dx.doi.org/10.3390/mi13030344

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955958/
https://www.ncbi.nlm.nih.gov/pubmed/35334636
http://dx.doi.org/10.3390/mi13030344

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