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Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition

Due to the precursor gas flow in the focused ion beam induced deposition process, a shadow effect appears behind the shading structures. This article carries out experiments with phenanthrene as the precursor gas and establishes a numerical model to define the shadow area and estimate the intensity...

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Detalles Bibliográficos
Autores principales: Fang, Chen, Xing, Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955986/
https://www.ncbi.nlm.nih.gov/pubmed/35335717
http://dx.doi.org/10.3390/nano12060905
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author Fang, Chen
Xing, Yan
author_facet Fang, Chen
Xing, Yan
author_sort Fang, Chen
collection PubMed
description Due to the precursor gas flow in the focused ion beam induced deposition process, a shadow effect appears behind the shading structures. This article carries out experiments with phenanthrene as the precursor gas and establishes a numerical model to define the shadow area and estimate the intensity of the shadow effect, considering the morphology of shading structure, the beam shift, and the nozzle parameters. Within the shadow area, the precursor molecule adsorption contribution is estimated by calculating the fraction of precursor gas flow in a specific direction. Finally, the number of precursor molecules within the beam impact area influenced by the shadow effect is obtained, emphasizing the important role of gas surface diffusion. The adsorption contribution within the shadow area differs a lot while deposited structures are similar in height. The error between the simulation and the experimental results is about 5%, verifying the accuracy of the proposed model.
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spelling pubmed-89559862022-03-26 Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition Fang, Chen Xing, Yan Nanomaterials (Basel) Article Due to the precursor gas flow in the focused ion beam induced deposition process, a shadow effect appears behind the shading structures. This article carries out experiments with phenanthrene as the precursor gas and establishes a numerical model to define the shadow area and estimate the intensity of the shadow effect, considering the morphology of shading structure, the beam shift, and the nozzle parameters. Within the shadow area, the precursor molecule adsorption contribution is estimated by calculating the fraction of precursor gas flow in a specific direction. Finally, the number of precursor molecules within the beam impact area influenced by the shadow effect is obtained, emphasizing the important role of gas surface diffusion. The adsorption contribution within the shadow area differs a lot while deposited structures are similar in height. The error between the simulation and the experimental results is about 5%, verifying the accuracy of the proposed model. MDPI 2022-03-09 /pmc/articles/PMC8955986/ /pubmed/35335717 http://dx.doi.org/10.3390/nano12060905 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fang, Chen
Xing, Yan
Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title_full Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title_fullStr Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title_full_unstemmed Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title_short Investigation of the Shadow Effect in Focused Ion Beam Induced Deposition
title_sort investigation of the shadow effect in focused ion beam induced deposition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8955986/
https://www.ncbi.nlm.nih.gov/pubmed/35335717
http://dx.doi.org/10.3390/nano12060905
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