OES diagnostics as a universal technique to control the Si etching structures profile in ICP

In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF(6)/C(4)F(8)/O(2) plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm a...

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Detalles Bibliográficos
Autores principales: Osipov, Artem A., Iankevich, Gleb A., Speshilova, Anastasia B., Gagaeva, Alina E., Osipov, Armenak A., Enns, Yakov B., Kazakin, Alexey N., Endiiarova, Ekaterina V., Belyanov, Ilya A., Ivanov, Viktor I., Alexandrov, Sergey E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8960894/
https://www.ncbi.nlm.nih.gov/pubmed/35347199
http://dx.doi.org/10.1038/s41598-022-09266-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8960894/
https://www.ncbi.nlm.nih.gov/pubmed/35347199
http://dx.doi.org/10.1038/s41598-022-09266-x

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