Toward Single-Atomic-Layer Lithography on Highly Oriented Pyrolytic Graphite Surfaces Using AFM-Based Electrochemical Etching

Atomic force microscopy (AFM)-based electrochemical etching of a highly oriented pyrolytic graphite (HOPG) surface is studied toward the single-atomic-layer lithography of intricate patterns. Electrochemical etching is performed in the water meniscus formed between the AFM tip apex and HOPG surface due to a capillary effect under controlled high relative humidity (~ 75%) at otherwise ambient conditions. The conditions to etch nano-holes, nano-lines, and other intricate patterns are investigated. The electrochemical reactions of HOPG etching should not generate debris due to the conversion of graphite to gaseous CO and CO(2) based on etching reactions. However, debris is observed on the etched HOPG surface, and incomplete gasification of carbon occurs during the etching process, resulting in the generation of solid intermediates. Moreover, the applied potential is of critical importance for precise etching, and the precision is also significantly influenced by the AFM tip wear. This study shows that the AFM-based electrochemical etching has the potential to remove the material in a single-atomic-layer precision. This result is likely because the etching process is based on anodic dissolution, resulting in the material removal atom by atom.