Direct measurement of nanoscale filamentary hot spots in resistive memory devices

Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous current densities and whose behavior lies at th...

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Detalles Bibliográficos
Autores principales: Deshmukh, Sanchit, Rojo, Miguel Muñoz, Yalon, Eilam, Vaziri, Sam, Koroglu, Cagil, Islam, Raisul, Iglesias, Ricardo A., Saraswat, Krishna, Pop, Eric
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8967235/
https://www.ncbi.nlm.nih.gov/pubmed/35353574
http://dx.doi.org/10.1126/sciadv.abk1514

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8967235/
https://www.ncbi.nlm.nih.gov/pubmed/35353574
http://dx.doi.org/10.1126/sciadv.abk1514

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