Cargando…
Direct measurement of nanoscale filamentary hot spots in resistive memory devices
Resistive random access memory (RRAM) is an important candidate for both digital, high-density data storage and for analog, neuromorphic computing. RRAM operation relies on the formation and rupture of nanoscale conductive filaments that carry enormous current densities and whose behavior lies at th...
Autores principales: | Deshmukh, Sanchit, Rojo, Miguel Muñoz, Yalon, Eilam, Vaziri, Sam, Koroglu, Cagil, Islam, Raisul, Iglesias, Ricardo A., Saraswat, Krishna, Pop, Eric |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8967235/ https://www.ncbi.nlm.nih.gov/pubmed/35353574 http://dx.doi.org/10.1126/sciadv.abk1514 |
Ejemplares similares
-
Spatially-Resolved
Thermometry of Filamentary Nanoscale
Hot Spots in TiO(2) Resistive Random Access Memories to Address
Device Variability
por: Swoboda, Timm, et al.
Publicado: (2023) -
Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy
por: Swoboda, Timm, et al.
Publicado: (2023) -
Spatially Resolved Thermometry of Resistive Memory Devices
por: Yalon, Eilam, et al.
Publicado: (2017) -
Neuromorphic crossbar circuit with nanoscale filamentary-switching binary memristors for speech recognition
por: Truong, Son Ngoc, et al.
Publicado: (2014) -
Ultrahigh thermal isolation across heterogeneously layered two-dimensional materials
por: Vaziri, Sam, et al.
Publicado: (2019)