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Effect of ethylenediamine on CMP performance of ruthenium in H(2)O(2)-based slurries

With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next generation barrier material to replace the conventional bilayer of tantalum and tantalum nitride due to its properties such as allowing direct copper electrodeposition. In this work, the effect of ethylenedia...

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Detalles Bibliográficos
Autores principales: Xu, Yi, Ma, Tengda, Liu, Yuling, Tan, Baimei, Zhang, Shihao, Wang, Yazhen, Song, Guoqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8978706/
https://www.ncbi.nlm.nih.gov/pubmed/35424475
http://dx.doi.org/10.1039/d1ra08243d