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Effect of ethylenediamine on CMP performance of ruthenium in H(2)O(2)-based slurries
With the aggressive scaling of integrated circuits, ruthenium has been proposed as the next generation barrier material to replace the conventional bilayer of tantalum and tantalum nitride due to its properties such as allowing direct copper electrodeposition. In this work, the effect of ethylenedia...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8978706/ https://www.ncbi.nlm.nih.gov/pubmed/35424475 http://dx.doi.org/10.1039/d1ra08243d |