Improving the properties of Fe(2)O(3) by a sparking method under a uniform magnetic field for a high-performance humidity sensor

Iron oxide (Fe(2)O(3)) thin films are promising semiconductors for electronic applications because Fe(2)O(3) is an earth-abundant semiconductor with an appropriate band gap. However, many methods for the synthesis of Fe(2)O(3) thin films require a corrosive source, complex procedures, and many types...

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Detalles Bibliográficos
Autores principales: Tippo, Posak, Singjai, Pisith, Sroila, Waraporn, Jaisamer, Tipsuda, Suttanon, Nongpanita, Panthawan, Arisara, Kantarak, Ekkapong, Sroila, Wattikon, Thongsuwan, Wiradej, Kumpika, Tewasin, Wiranwetchayan, Orawan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8978814/
https://www.ncbi.nlm.nih.gov/pubmed/35425154
http://dx.doi.org/10.1039/d1ra07490c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8978814/
https://www.ncbi.nlm.nih.gov/pubmed/35425154
http://dx.doi.org/10.1039/d1ra07490c

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