High performance and gate-controlled GeSe/HfS(2) negative differential resistance device

Transition metal dichalcogenides (TMDs) have received significant attention owing to their thickness-dependent folded current–voltage (I(ds)–V(ds)) characteristics, which offer various threshold voltage values. Owing to these astonishing characteristics, TMDs based negative differential resistance (...

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Detalles Bibliográficos
Autores principales: Afzal, Amir Muhammad, Iqbal, Muhammad Zahir, Iqbal, Muhammad Waqas, Alomayri, Thamer, Dastgeer, Ghulam, Javed, Yasir, Shad, Naveed Akhter, Khan, Rajwali, Sajid, M. Munir, Neffati, R., Abbas, Tasawar, Khan, Qudrat Ullah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979185/
https://www.ncbi.nlm.nih.gov/pubmed/35425203
http://dx.doi.org/10.1039/d1ra07276e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8979185/
https://www.ncbi.nlm.nih.gov/pubmed/35425203
http://dx.doi.org/10.1039/d1ra07276e

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