Thin film encapsulation for quantum dot light-emitting diodes using a-SiN(x):H/SiO(x)N(y)/hybrid SiO(x) barriers

A facile thin film encapsulation (TFE) method having a triple-layered structure of a-SiN(x):H/SiO(x)N(y)/hybrid SiO(x) (ASH) on QD-LEDs was performed utilizing both reproducible plasma-enhanced chemical vapor deposition (PECVD) and simple dip-coating processes without adopting atomic layer depositio...

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Detalles Bibliográficos
Autores principales: Lim, Keun Yong, Kim, Hong Hee, Noh, Ji Hyun, Tak, So Hyun, Yu, Jae-Woong, Choi, Won Kook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8981021/
https://www.ncbi.nlm.nih.gov/pubmed/35425435
http://dx.doi.org/10.1039/d1ra07712k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8981021/
https://www.ncbi.nlm.nih.gov/pubmed/35425435
http://dx.doi.org/10.1039/d1ra07712k

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