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Doping of Sn-based two-dimensional perovskite semiconductor for high-performance field-effect transistors and thermoelectric devices
Doping is an important technique for semiconductor materials and devices, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we demonstrate a facile way to dope two-dimensional Sn-based perovskite (PEA)(2)SnI(4) by incorporating SnI(4) in the pr...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983347/ https://www.ncbi.nlm.nih.gov/pubmed/35402868 http://dx.doi.org/10.1016/j.isci.2022.104109 |