Selective etching of silicon nitride over silicon oxide using ClF(3)/H(2) remote plasma

Precise and selective removal of silicon nitride (SiN(x)) over silicon oxide (SiO(y)) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiN(x) over SiO(y) has been investigated usi...

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Detalles Bibliográficos
Autores principales: Lee, Won Oh, Kim, Ki Hyun, Kim, Doo San, Ji, You Jin, Kang, Ji Eun, Tak, Hyun Woo, Park, Jin Woo, Song, Han Dock, Kim, Ki Seok, Cho, Byeong Ok, Kim, Young Lae, Yeom, Geun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983696/
https://www.ncbi.nlm.nih.gov/pubmed/35383214
http://dx.doi.org/10.1038/s41598-022-09252-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8983696/
https://www.ncbi.nlm.nih.gov/pubmed/35383214
http://dx.doi.org/10.1038/s41598-022-09252-3

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