Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode

The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues associated with the poor quality and large strain of nitride material system caused by the inherent mismatch of heteroepitaxy. In this work, we have prepared the strain-free AlN film with low dislocation d...

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Detalles Bibliográficos
Autores principales: Chang, Hongliang, Liu, Zhetong, Yang, Shenyuan, Gao, Yaqi, Shan, Jingyuan, Liu, Bingyao, Sun, Jingyu, Chen, Zhaolong, Yan, Jianchang, Liu, Zhiqiang, Wang, Junxi, Gao, Peng, Li, Jinmin, Liu, Zhongfan, Wei, Tongbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8991230/
https://www.ncbi.nlm.nih.gov/pubmed/35393405
http://dx.doi.org/10.1038/s41377-022-00756-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8991230/
https://www.ncbi.nlm.nih.gov/pubmed/35393405
http://dx.doi.org/10.1038/s41377-022-00756-1

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