Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to s...

Descripción completa

Detalles Bibliográficos
Autores principales: Sadowski, Janusz, Kaleta, Anna, Kryvyi, Serhii, Janaszko, Dorota, Kurowska, Bogusława, Bilska, Marta, Wojciechowski, Tomasz, Domagala, Jarosław Z., Sanchez, Ana M., Kret, Sławomir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8994761/
https://www.ncbi.nlm.nih.gov/pubmed/35397635
http://dx.doi.org/10.1038/s41598-022-09847-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8994761/
https://www.ncbi.nlm.nih.gov/pubmed/35397635
http://dx.doi.org/10.1038/s41598-022-09847-w

Ejemplares similares