Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration

In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nano...

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Detalles Bibliográficos
Autores principales: Zannier, Valentina, Li, Ang, Rossi, Francesca, Yadav, Sachin, Petersson, Karl, Sorba, Lucia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999517/
https://www.ncbi.nlm.nih.gov/pubmed/35407877
http://dx.doi.org/10.3390/ma15072543

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999517/
https://www.ncbi.nlm.nih.gov/pubmed/35407877
http://dx.doi.org/10.3390/ma15072543

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