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Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration
In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nano...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999517/ https://www.ncbi.nlm.nih.gov/pubmed/35407877 http://dx.doi.org/10.3390/ma15072543 |