Investigation of the Anisotropy of 4H-SiC Materials in Nanoindentation and Scratch Experiments

Silicon carbide is an ideal material for advanced electronics, military, and aerospace applications due to its superior physical and chemical properties. In order to understand the effect of crystal anisotropy of 4H-SiC on its processability, nanoindentation and nanoscratch tests on various crystall...

Descripción completa

Detalles Bibliográficos
Autores principales: Shi, Suhua, Yu, Yiqing, Wang, Ningchang, Zhang, Yong, Shi, Weibin, Liao, Xinjiang, Duan, Nian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999777/
https://www.ncbi.nlm.nih.gov/pubmed/35407828
http://dx.doi.org/10.3390/ma15072496

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999777/
https://www.ncbi.nlm.nih.gov/pubmed/35407828
http://dx.doi.org/10.3390/ma15072496

Ejemplares similares