Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al(2)O(3) dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking c...

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Detalles Bibliográficos
Autores principales: Chen, Genqiang, Wang, Wei, Lin, Fang, Zhang, Minghui, Wei, Qiang, Yu, Cui, Wang, Hongxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999921/
https://www.ncbi.nlm.nih.gov/pubmed/35407888
http://dx.doi.org/10.3390/ma15072557

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999921/
https://www.ncbi.nlm.nih.gov/pubmed/35407888
http://dx.doi.org/10.3390/ma15072557

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