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Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate
In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al(2)O(3) dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking c...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8999921/ https://www.ncbi.nlm.nih.gov/pubmed/35407888 http://dx.doi.org/10.3390/ma15072557 |