Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO(3) Thin Films

In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO(3) (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to...

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Detalles Bibliográficos
Autores principales: Kang, Jeonghun, Lee, Jeong Hyuk, Lee, Han-Koo, Kim, Kwang-Tak, Kim, Jin Hyeok, Maeng, Min-Jae, Hong, Jong-Am, Park, Yongsup, Kim, Kee Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000141/
https://www.ncbi.nlm.nih.gov/pubmed/35407749
http://dx.doi.org/10.3390/ma15072417

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000141/
https://www.ncbi.nlm.nih.gov/pubmed/35407749
http://dx.doi.org/10.3390/ma15072417

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