Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

In this work, low-temperature Schottky source/drain (S/D) MOSFETs are investigated as the top-tier devices for 3D sequential integration. Complementary Schottky S/D FinFETs are successfully fabricated with a maximum processing temperature of 500 °C. Through source/drain extension (SDE) engineering,...

Descripción completa

Detalles Bibliográficos
Autores principales: Mao, Shujuan, Gao, Jianfeng, He, Xiaobin, Liu, Weibing, Liu, Jinbiao, Wang, Guilei, Zhou, Na, Luo, Yanna, Cao, Lei, Zhang, Ran, Liu, Haochen, Li, Xun, Li, Yongliang, Wu, Zhenhua, Li, Junfeng, Luo, Jun, Zhao, Chao, Wang, Wenwu, Yin, Huaxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9003556/
https://www.ncbi.nlm.nih.gov/pubmed/35407340
http://dx.doi.org/10.3390/nano12071218

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9003556/
https://www.ncbi.nlm.nih.gov/pubmed/35407340
http://dx.doi.org/10.3390/nano12071218

Ejemplares similares