High reactivity of H(2)O vapor on GaN surfaces

Understanding the process of oxidation on the surface of GaN is important for improving metal-oxide-semiconductor (MOS) devices. Real-time X-ray photoelectron spectroscopy was used to observe the dynamic adsorption behavior of GaN surfaces upon irradiation of H(2)O, O(2), N(2)O, and NO gases. It was...

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Detalles Bibliográficos
Autores principales: Sumiya, Masatomo, Sumita, Masato, Tsuda, Yasutaka, Sakamoto, Tetsuya, Sang, Liwen, Harada, Yoshitomo, Yoshigoe, Akitaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2022
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9004525/
https://www.ncbi.nlm.nih.gov/pubmed/35422674
http://dx.doi.org/10.1080/14686996.2022.2052180

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9004525/
https://www.ncbi.nlm.nih.gov/pubmed/35422674
http://dx.doi.org/10.1080/14686996.2022.2052180

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