Improved resistive switching characteristics of a multi-stacked HfO(2)/Al(2)O(3)/HfO(2) RRAM structure for neuromorphic and synaptic applications: experimental and computational study

Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO(2)/Al(2)O(3)/HfO(2)) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. First, the microstructure of the fabricated TaN/HfO(2)/Al(2)O(3)/HfO(2)/ITO RRAM device was examined by the cross-sectional High-Resolut...

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Detalles Bibliográficos
Autores principales: Khera, Ejaz Ahmad, Mahata, Chandreswar, Imran, Muhammad, Niaz, Niaz Ahmad, Hussain, Fayyaz, Khalil, R. M. Arif, Rasheed, Umbreen, SungjunKim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9008441/
https://www.ncbi.nlm.nih.gov/pubmed/35432948
http://dx.doi.org/10.1039/d1ra08103a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9008441/
https://www.ncbi.nlm.nih.gov/pubmed/35432948
http://dx.doi.org/10.1039/d1ra08103a

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