In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells

[Image: see text] The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiO(x)) layer has been identified as the next step to further increase the conversion efficiency of current mainstream crystalline silicon (c-Si)...

Descripción completa

Detalles Bibliográficos
Autores principales: Morisset, Audrey, Famprikis, Theodosios, Haug, Franz-Josef, Ingenito, Andrea, Ballif, Christophe, Bannenberg, Lars J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9011350/
https://www.ncbi.nlm.nih.gov/pubmed/35357122
http://dx.doi.org/10.1021/acsami.2c01225

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9011350/
https://www.ncbi.nlm.nih.gov/pubmed/35357122
http://dx.doi.org/10.1021/acsami.2c01225

Ejemplares similares