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In Situ Reflectometry and Diffraction Investigation of the Multiscale Structure of p-Type Polysilicon Passivating Contacts for c-Si Solar Cells
[Image: see text] The integration of passivating contacts based on a highly doped polycrystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiO(x)) layer has been identified as the next step to further increase the conversion efficiency of current mainstream crystalline silicon (c-Si)...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9011350/ https://www.ncbi.nlm.nih.gov/pubmed/35357122 http://dx.doi.org/10.1021/acsami.2c01225 |