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Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET
A novel snapback-free RC-LIGBT with integrated self-biased N-MOSFET is proposed and investigated by simulation. The device features an integrated self-biased N-MOSFET(ISM) on the anode active region. One side of the ISM is shorted to the P + anode electrode of RC-LIGBT and the other side is connecte...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9016105/ https://www.ncbi.nlm.nih.gov/pubmed/35435523 http://dx.doi.org/10.1186/s11671-022-03685-5 |