Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient con...

Descripción completa

Detalles Bibliográficos
Autores principales: Yang, Peng, Zha, Jiajia, Gao, Guoyun, Zheng, Long, Huang, Haoxin, Xia, Yunpeng, Xu, Songcen, Xiong, Tengfei, Zhang, Zhuomin, Yang, Zhengbao, Chen, Ye, Ki, Dong-Keun, Liou, Juin J., Liao, Wugang, Tan, Chaoliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9018950/
https://www.ncbi.nlm.nih.gov/pubmed/35441245
http://dx.doi.org/10.1007/s40820-022-00852-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9018950/
https://www.ncbi.nlm.nih.gov/pubmed/35441245
http://dx.doi.org/10.1007/s40820-022-00852-2

Ejemplares similares