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Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient con...

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Detalles Bibliográficos
Autores principales:	Yang, Peng, Zha, Jiajia, Gao, Guoyun, Zheng, Long, Huang, Haoxin, Xia, Yunpeng, Xu, Songcen, Xiong, Tengfei, Zhang, Zhuomin, Yang, Zhengbao, Chen, Ye, Ki, Dong-Keun, Liou, Juin J., Liao, Wugang, Tan, Chaoliang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Nature Singapore 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9018950/ https://www.ncbi.nlm.nih.gov/pubmed/35441245 http://dx.doi.org/10.1007/s40820-022-00852-2

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