Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO(3)/SrTiO(3) heterointerface electron system

For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance–temperature characteristics of two-dimensional electron gas at LaAlO(3)/SrTiO...

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Detalles Bibliográficos
Autores principales: Kwak, Yongsu, Han, Woojoo, Lee, Joon Sung, Song, Jonghyun, Kim, Jinhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9019089/
https://www.ncbi.nlm.nih.gov/pubmed/35440752
http://dx.doi.org/10.1038/s41598-022-10425-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9019089/
https://www.ncbi.nlm.nih.gov/pubmed/35440752
http://dx.doi.org/10.1038/s41598-022-10425-3

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