Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He(+) and H(2)(+) Ions

Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation is a good method. He and H co-implantation into Si can efficiently enhance exfoliation efficiency compared to only H implantation. In this study, 6H-SiC single c...

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Detalles Bibliográficos
Autores principales: You, Guoqiang, Lin, Haipeng, Qu, Yanfeng, Hao, Jie, You, Suyuan, Li, Bingsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025216/
https://www.ncbi.nlm.nih.gov/pubmed/35454634
http://dx.doi.org/10.3390/ma15082941

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025216/
https://www.ncbi.nlm.nih.gov/pubmed/35454634
http://dx.doi.org/10.3390/ma15082941

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