High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl(3)/SF(6) inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was realized by optimizing the SF(6) concentration...

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Detalles Bibliográficos
Autores principales: Zhang, Penghao, Wang, Luyu, Zhu, Kaiyue, Yang, Yannan, Fan, Rong, Pan, Maolin, Xu, Saisheng, Xu, Min, Wang, Chen, Wu, Chunlei, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025793/
https://www.ncbi.nlm.nih.gov/pubmed/35457894
http://dx.doi.org/10.3390/mi13040589

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9025793/
https://www.ncbi.nlm.nih.gov/pubmed/35457894
http://dx.doi.org/10.3390/mi13040589

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