Heat Dissipation Characteristics of IGBT Module Based on Flow-Solid Coupling

With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit. At present, third-generation semiconductor devices including SiC MOSFETs (Metal-Oxide-Semiconductor...

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Detalles Bibliográficos
Autores principales: Tan, Lipeng, Liu, Peisheng, She, Chenhui, Xu, Pengpeng, Yan, Lei, Quan, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9028534/
https://www.ncbi.nlm.nih.gov/pubmed/35457859
http://dx.doi.org/10.3390/mi13040554

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9028534/
https://www.ncbi.nlm.nih.gov/pubmed/35457859
http://dx.doi.org/10.3390/mi13040554

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