Demonstration of Efficient Ultrathin Side-Emitting InGaN/GaN Flip-Chip Light-Emitting Diodes by Double Side Reflectors

This work proposes an InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) and describes the sidewall light emission characteristics for the application of backlight units in display technology. The USE-LEDs are fabricated with top (ITO/distributed...

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Detalles Bibliográficos
Autores principales: Kim, Tae Kyoung, Islam, Abu Bashar Mohammad Hamidul, Cha, Yu-Jung, Oh, Seung Hyun, Kwak, Joon Seop
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9028715/
https://www.ncbi.nlm.nih.gov/pubmed/35458050
http://dx.doi.org/10.3390/nano12081342

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9028715/
https://www.ncbi.nlm.nih.gov/pubmed/35458050
http://dx.doi.org/10.3390/nano12081342

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