Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of the capture of photogenerated carriers through the...

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Detalles Bibliográficos
Autores principales: Ruiz, Nazaret, Fernández, Daniel, Stanojević, Lazar, Ben, Teresa, Flores, Sara, Braza, Verónica, Carro, Alejandro Gallego, Luna, Esperanza, Ulloa, José María, González, David
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030006/
https://www.ncbi.nlm.nih.gov/pubmed/35458076
http://dx.doi.org/10.3390/nano12081368

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030006/
https://www.ncbi.nlm.nih.gov/pubmed/35458076
http://dx.doi.org/10.3390/nano12081368

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