Analysis of Low-Frequency 1/f Noise Characteristics for MoTe(2) Ambipolar Field-Effect Transistors

Low-frequency electronic noise is an important parameter used for the electronic and sensing applications of transistors. Here, we performed a systematic study on the low-frequency noise mechanism for both p-channel and n-channel MoTe(2) field-effect transistors (FET) at different temperatures, find...

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Detalles Bibliográficos
Autores principales: Zhang, Bing, Hu, Congzhen, Xin, Youze, Li, Yaoxin, Xie, Yiyun, Xing, Qian, Guo, Zhuoqi, Xue, Zhongming, Li, Dan, Zhang, Guohe, Geng, Li, Ke, Zungui, Wang, Chi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030018/
https://www.ncbi.nlm.nih.gov/pubmed/35458035
http://dx.doi.org/10.3390/nano12081325

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030018/
https://www.ncbi.nlm.nih.gov/pubmed/35458035
http://dx.doi.org/10.3390/nano12081325

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