Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Inyoung, Park, Hyojin, Nguyen, Quan The, Kim, Garam, Cho, Seongjae, Cho, Ilhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030162/
https://www.ncbi.nlm.nih.gov/pubmed/35457814
http://dx.doi.org/10.3390/mi13040508

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030162/
https://www.ncbi.nlm.nih.gov/pubmed/35457814
http://dx.doi.org/10.3390/mi13040508

Ejemplares similares