Optimization of Feedback FET with Asymmetric Source Drain Doping Profile

A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with...

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Detalles Bibliográficos
Autores principales: Lee, Inyoung, Park, Hyojin, Nguyen, Quan The, Kim, Garam, Cho, Seongjae, Cho, Ilhwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030162/
https://www.ncbi.nlm.nih.gov/pubmed/35457814
http://dx.doi.org/10.3390/mi13040508
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author Lee, Inyoung
Park, Hyojin
Nguyen, Quan The
Kim, Garam
Cho, Seongjae
Cho, Ilhwan
author_facet Lee, Inyoung
Park, Hyojin
Nguyen, Quan The
Kim, Garam
Cho, Seongjae
Cho, Ilhwan
author_sort Lee, Inyoung
collection PubMed
description A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
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spelling pubmed-90301622022-04-23 Optimization of Feedback FET with Asymmetric Source Drain Doping Profile Lee, Inyoung Park, Hyojin Nguyen, Quan The Kim, Garam Cho, Seongjae Cho, Ilhwan Micromachines (Basel) Article A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain. MDPI 2022-03-25 /pmc/articles/PMC9030162/ /pubmed/35457814 http://dx.doi.org/10.3390/mi13040508 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lee, Inyoung
Park, Hyojin
Nguyen, Quan The
Kim, Garam
Cho, Seongjae
Cho, Ilhwan
Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title_full Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title_fullStr Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title_full_unstemmed Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title_short Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
title_sort optimization of feedback fet with asymmetric source drain doping profile
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030162/
https://www.ncbi.nlm.nih.gov/pubmed/35457814
http://dx.doi.org/10.3390/mi13040508
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AT kimgaram optimizationoffeedbackfetwithasymmetricsourcedraindopingprofile
AT choseongjae optimizationoffeedbackfetwithasymmetricsourcedraindopingprofile
AT choilhwan optimizationoffeedbackfetwithasymmetricsourcedraindopingprofile

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