Vacuum and Low-Temperature Characteristics of Silicon Oxynitride-Based Bipolar RRAM

This study investigates the switching characteristics of the silicon oxynitride (SiO(x)N(y))-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances at temperatures ranging from 300 K to 77 K. The operating ambiances (open air or vacuum) and temperature affect th...

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Detalles Bibliográficos
Autores principales: Das, Nayan C., Kim, Minjae, Hong, Sung-Min, Jang, Jae-Hyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030198/
https://www.ncbi.nlm.nih.gov/pubmed/35457909
http://dx.doi.org/10.3390/mi13040604

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030198/
https://www.ncbi.nlm.nih.gov/pubmed/35457909
http://dx.doi.org/10.3390/mi13040604

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